No not really, you have parametric yield and yield due to particulate which is a defects per wafer and really just size of die effect and probability of defect falling on a CU which can be disabled.....
Parametric yield - if die fails at 2.2 Ghz, its not a good die anyway so why use it at 1.9 Ghz and its a poor specimin and would be low performance part anyway ? With EUBV on critcal layers parametrics would be better anyway except SOME dies at edges of wafers, but who wants a dud.
And I was correct,. EUV litho at TSMC is astronomical and cost more than god, die size is big big major effect of cost of next gen consoles if using enhanced EUV litho for gates, all the estimates from Bloomberg and others were assuming RDNA1 and DUV costs and way off on due costs. Netx gen TSMC sourced EUV is going to cost lots.
SO XSX will be pushing 600 at a discount, and depending on ps5 die size, it will be not too far behind unless serious big losses are taken by either.